JPH0427198B2 - - Google Patents

Info

Publication number
JPH0427198B2
JPH0427198B2 JP58151353A JP15135383A JPH0427198B2 JP H0427198 B2 JPH0427198 B2 JP H0427198B2 JP 58151353 A JP58151353 A JP 58151353A JP 15135383 A JP15135383 A JP 15135383A JP H0427198 B2 JPH0427198 B2 JP H0427198B2
Authority
JP
Japan
Prior art keywords
substrate
holding member
holding
molecular beam
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58151353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6042297A (ja
Inventor
Shunichi Murakami
Tetsuo Ishida
Sumio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP15135383A priority Critical patent/JPS6042297A/ja
Publication of JPS6042297A publication Critical patent/JPS6042297A/ja
Publication of JPH0427198B2 publication Critical patent/JPH0427198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP15135383A 1983-08-19 1983-08-19 分子線エピタキシャル成長装置用の基板保持装置 Granted JPS6042297A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15135383A JPS6042297A (ja) 1983-08-19 1983-08-19 分子線エピタキシャル成長装置用の基板保持装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15135383A JPS6042297A (ja) 1983-08-19 1983-08-19 分子線エピタキシャル成長装置用の基板保持装置

Publications (2)

Publication Number Publication Date
JPS6042297A JPS6042297A (ja) 1985-03-06
JPH0427198B2 true JPH0427198B2 (en]) 1992-05-11

Family

ID=15516694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15135383A Granted JPS6042297A (ja) 1983-08-19 1983-08-19 分子線エピタキシャル成長装置用の基板保持装置

Country Status (1)

Country Link
JP (1) JPS6042297A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012184489A (ja) * 2011-03-08 2012-09-27 Sumitomo Electric Ind Ltd 真空蒸着装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565682A (en) * 1979-06-25 1981-01-21 Takeya Kk Pinball air feeding dustproof device of pinball

Also Published As

Publication number Publication date
JPS6042297A (ja) 1985-03-06

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